Adatom concentration on GaAs(001) during annealing : Vapor growth and epitaxy 1996JOHNSON, M. D; LEUNG, K. T; BIRCH, A et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 572-578, issn 0022-0248Conference Paper

Electrical fluctuations in HgCdTe introduced during quenching after annealing : Vapor growth and epitaxy 1996EBE, H; YAMAMOTO, K.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 746-750, issn 0022-0248Conference Paper

Formation of YMnO₃ films directly on Si substrate : Vapor growth and epitaxy 1996AOKI, N; FUJIMURA, N; YOSHIMURA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 796-800, issn 0022-0248Conference Paper

Initial growth characteristics of germanium on silicon in LPCVD using germane gas : Vapor growth and epitaxy 1996KOBAYASHI, S; SAKURABA, M; MATSUURA, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 686-690, issn 0022-0248Conference Paper

Origin of surface reflectance spectrum during epitaxy : Vapor growth and epitaxy 1996KOBAYASHI, N; KOBAYASHI, Y; UWAI, K et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 544-549, issn 0022-0248Conference Paper

SiC-bulk growth by physical-vapor transport and its global modelling : Vapor growth and epitaxy 1996HOFMANN, D; ECKSTEIN, R; KÖLBL, M et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 669-674, issn 0022-0248Conference Paper

The growth of mid-infrared lasers and AlAs_xSb_1-x by MOCVD : Vapor growth and epitaxy 1996BIEFELD, R. M; ALLERMAN, A. A; KURTZ, S. R et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 593-598, issn 0022-0248Conference Paper

Investigation of the interfacial quality and the influence of different substrates in ZnSe homoepitaxy : Vapor growth and epitaxy 1996WENISCH, H; BEHR, T; KREISSL, J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 751-756, issn 0022-0248Conference Paper

Kinetic limitations on incorporation of Zn in Cd_1-xZn_xTe : Vapor growth and epitaxy 1996REINOSO, J. J; KO, E. I; SIDES, P. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 713-718, issn 0022-0248Conference Paper

3C-SiC growth by alternate supply of SiH₂Cl₂ and C₂H₂ : Vapor growth and epitaxy 1996YAGI, K; NAGASAWA, H.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 653-657, issn 0022-0248Conference Paper

Computer simulation of surface growth : Vapor growth and epitaxy 1996XIAO, R.-F.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 531-538, issn 0022-0248Conference Paper

High-temperature X-ray measurements of gallates and cuprates : Vapor growth and epitaxy 1996UTKE, I; KLEMENZ, C; SCHEEL, H. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 813-820, issn 0022-0248Conference Paper

Low supersaturation nucleation and contactless growth of photorefractive ZnTe crystals : Vapor growth and epitaxy 1996GRASZA, K; TRIVEDI, S. B; YU, Z et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 719-725, issn 0022-0248Conference Paper

Partial pressure monitoring in cadmium telluride vapour growth : Vapor growth and epitaxy 1996CARLES, J; MULLINS, J. T; BRINKMAN, A. W et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 740-745, issn 0022-0248Conference Paper

Surface-related optical anisotropy of GaInP, InP, and GaP : Vapor growth and epitaxy 1996LUO, J. S; GEISZ, J. F; OLSON, J. M et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 558-563, issn 0022-0248Conference Paper

Misfit problems in epitaxy of high-T_c superconductors : Vapor growth and epitaxy 1996UTKE, I; KLEMENZ, C; SCHEEL, H. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 806-812, issn 0022-0248Conference Paper

The reactivity of dimethylcadmium on GaAs(100) and CdTe(100) : Vapor growth and epitaxy 1996YONG, K; REINOSO, J. J; GELLMAN, A. J et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 708-712, issn 0022-0248Conference Paper

Characterization of ternary substrate materials using triple axis X-ray diffraction : Vapor growth and epitaxy 1996YOON, H; LINDO, S. E; GOORSKY, M. S et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 775-782, issn 0022-0248Conference Paper

MOCVD growth and optical characterization of strain-induced quantum dots with InP island stressors : Vapor growth and epitaxy 1996HANNA, M. C; LU, Z. H; CAHILL, A. F et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 605-610, issn 0022-0248Conference Paper

Structural properties of GaN grown by MOVPE turbodisc mass-production reactor : Vapor growth and epitaxy 1996TRAN, C. A; KARLICEK, R. JR; SCHURMAN, M et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 647-652, issn 0022-0248Conference Paper

The stability of ordered structures in SiGe films examined by strain-energy calculations : Vapor growth and epitaxy 1996ARAKI, T; FUJIMURA, N; ITO, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 675-679, issn 0022-0248Conference Paper

MOCVD growth of high efficiency current-matched AlGaAs/Si tandem solar cell : Vapor growth and epitaxy 1996SOGA, T; BASKAR, K; KATO, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 579-584, issn 0022-0248Conference Paper

Preparation of pristine and Ba-doped C₆₀ films by hot-wall epitaxy : Vapor growth and epitaxy 1996SITTER, H; STIFTER, D; NGUYEN MANH, T et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 828-836, issn 0022-0248Conference Paper

Seeded physical vapor transport of cadmium-zinc telluride crystals : growth and characterization : Vapor growth and epitaxy 1996PALOSZ, W; GEORGE, M. A; COLLINS, E. E et al.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 733-739, issn 0022-0248Conference Paper

Spatially resolved photoluminescence of laterally overgrown InP on InP-coated Si substrates : Vapor growth and epitaxy 1996NARITSUKA, S; NISHINAGA, T.Journal of crystal growth. 1997, Vol 174, Num 1-4, pp 622-629, issn 0022-0248Conference Paper